2n3905 pnp general purpose amplifier 2n3905 this device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-bas e voltage 40 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 200 ma t j , t stg operating and storage j u nction temperature range -55 to +150 c symbol characteristic max units 2n3905 p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r q jc thermal resistanc e, j u nction to case 83.3 c/w r q ja thermal resistanc e, j u nction to ambient 200 c/w c b e to-92 2 n 390 5 , re v a ? 2 00 1 fairchild semiconductor c or por at ion
2n3905 pnp general purpose amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 m a, i e = 0 40 v v (br) ebo emitter-base breakdown voltage i e = 10 m a, i c = 0 5.0 v i cex collector cutoff current v ce = 30 v, v ob = 3.0 v 50 na i bl base cutoff current v ce = 30 v, v ob = 3.0 v 50 na h fe dc current gain v ce = 1.0 v, i c = 0.1 ma v ce = 1.0 v, i c = 1.0 ma v ce = 1.0 v, i c = 10 ma v ce = 1.0 v, i c = 50 ma v ce = 1.0 v, i c = 100 ma 30 40 50 30 15 150 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.25 0.40 v v v be( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.65 0.85 0.95 v v small signal characteristics c ob output capacitance v cb = 5.0 v, f = 1.0 mhz 4.5 pf c ib input capac itance v eb = 0.5 v, f = 1.0 mhz 10 pf h fe small-signal current gain i c = 10 ma, v ce = 20 v, f = 100 mhz 2.0 h fe small-signal current gain i c = 1.0 ma, v ce =10 v, 50 200 h re voltage feedback ratio f = 1.0 khz 0.1 5.0 x10 -4 h ie input impedance 0.5 8.0 k w h oe output impedance 1.0 40 m mhos nf noise figure v ce = 5.0 v, i c = 100 m a, r s = 1.0 k w , b w = 10 hz to 15.7 khz 5.0 db switching characteristics * pulse test: pulse w idth 300 m s, duty cycle 2.0% t d delay time v cc = 3.0 v, i cs = 10 ma, 35 ns t r rise time i b1 = 1.0 ma ,v ob ( off ) = 3.0 v 35 ns t s storage time v cc = 3.0 v, i cs = 10 ma, 200 ns t f fall time i b1 = i b2 = 1.0 ma 60 ns on characteristics*
2n390 5 typical characteristics common-base open circuit input and output capacitance vs reverse bias voltage 0.1 1 10 0 2 4 6 8 10 reverse bias voltage (v) capacitance (pf) c obo c ibo pnp general purpose amplifier (continued) ty pical pulsed current gain vs collector current 0. 1 0 . 2 0. 5 1 2 5 10 20 50 1 0 0 50 100 150 200 250 i - collector curre nt (ma) h - typical pulsed cu rrent gain c fe 125 c 25 c - 40 c v = 1 .0 v ce coll ector -em itt er sa tur ati on voltage vs coll ect or cur re nt 110100200 0 0.05 0. 1 0.15 0. 2 0.25 0. 3 i - collector current (ma) v - collector emitter voltage (v) c ce s a t 25 c - 40 c 125 c = 10 bas e-emitt er saturation voltage vs collect or curre nt 110100200 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c be s a t = 10 25 c - 40 c 125 c bas e e mi tter o n voltage vs collector current 0.1 1 10 25 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c be ( o n ) v = 1v ce 25 c - 40 c 125 c collector-cutoff current vs ambient temperature 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - a mbi e n t t emp er at ur e ( c) i - c ol le ct o r cu rr en t (n a) a cbo v = 25v cb
power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 sot-23 to-92 typical characteristics (continued) noise figure vs frequency 0.1 1 10 100 0 1 2 3 4 5 6 f - frequency (khz) nf - noise figure (db) i = 100 a, r = 2 00 ? c v = 5.0v ce s i = 100 a, r = 2.0 k ? c s i = 1.0 ma, r = 200 ? c s noise figure vs source resistance 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) k ? i = 100 a c v = 5.0v f = 1.0 khz ce i = 1.0 ma c s switching times vs collector current 1 10 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t r t s b1 c b2 i c 10 t f t d turn on and turn off times vs collector current 1 1 0 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t off b1 b2 i c 10 t on v = 0.5v be(off) t i = on t off b1 i c 10 2n390 5 pnp general purpose amplifier (continued)
2n390 5 typical characteristics (continued) pnp general purpose amplifier (continued) input impedance 0.1 1 10 0.1 1 10 i - collector current (ma) h - input impedance (k ) v = 10 v ce c ie f = 1.0 khz ? output admittance 0.1 1 10 10 100 1000 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1.0 khz current gain 0.1 1 10 10 20 50 100 200 500 1000 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz voltage feedback ratio 0.1 1 10 1 10 100 i - collector current (ma) h - voltage feedback ratio (x10 ) c re _ 4
to-92 tape and reel data march 2001, rev. b1 ?2001 fairchild semiconductor corporation to-92 packaging configuration: figure 1.0 ammo pack option see fig 3.0 for 2 ammo pack options 2000 units per eo70 box for std option fscint label 530mm x 130mm x 83mm intermediate box 10,000 units maximum per intermediate box for std option fscint label 114mm x 102mm x 51mm immediate box anti-static bubble sheets (to-92) bulk packing information eol code description leadclip dimension quantity j18z to-18 option std no lead clip 2.0 k / box j05z to-5 option std no lead clip 1.5 k / box no eol code to-92 standard straight for: pkg 92, no leadclip 2.0 k / box bulk option see bulk packing information table 375mm x 267mm x 375mm intermediate box fscint label customized label 333mm x 231mm x 183mm intermediate box fscint label customized label to-92 tnr/ammo packing infromation packing style quantity eol code reel a 2,000 d26z e2,000 d27z ammo m 2,000 d74z p2,000 d75z unit weight = 0.22 gm reel weight with components = 1.04 kg ammo weight with components = 1.02 kg max quantity per intermediate box = 10,000 units f63tnr label 5 ammo boxes per intermediate box customized label 327mm x 158mm x 135mm immediate box lot: cbvk741b019 nsid: pn2222n d/c1: d9842 spec rev: b2 spec: qty: 10000 qa rev: fairchild semiconductor corporation htb:b (fscint) f63tnr label customized label 5 reels per intermediate box tape and reel option see fig 2.0 for various reeling styles lot: cbvk741b019 fsid: pn222n d/c1: d9842 qty1: spec rev: spec: qty: 2000 d/c2: qty2: cpn: n/f: f (f63tnr)3 f63tnr label sample fscint label sample c 5 eo70 boxes per intermediate box ustomized label 94 (non proelectron series), 96 l34z to-92 standard straight for: pkg 94 no leadclip 2.0 k / box (proelectron series bcxxx, bfxxx, bsrxxx), 97, 98
to-92 tape and reel data, continued september 1999, rev. b to-92 reeling style configuration: figure 2.0 style a , d26z, d70z (s/h) machine option a?(h) style e , d27z, d71z (s/h) machine option e?(j) first wire off is emitter adhesive tape is on the top side flat of transistor is on bottom order style d75z (p) first wire off is collector adhesive tape is on the top side flat of transistor is on top order style d74z (m) to-92 radial ammo packaging configuration: figure 3.0 first wire off is emitter (on pkg. 92) adhesive tape is on bottom side flat of transistor is on bottom first wire off is collector (on pkg. 92) adhesive tape is on bottom side flat of transistor is on top
item description base of package to lead bend component height lead clinch height component base height component alignment ( side/side ) component alignment ( front/back ) component pitch feed hole pitch hole center to first lead hole center to component center lead spread lead thickness cut lead length taped lead length taped lead thickness carrier tape thickness carrier tape width hold - down tape width hold - down tape position feed hole position sprocket hole diameter lead spring out symbol b ha ho h1 pd hd p po p1 p2 f1/f2 d l l1 t t1 w wo w1 w2 do s dimension 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max) note : all dimensions are in inches. item description sysmbol minimum maximum reel diameter d1 13.975 14.025 arbor hole diameter (standard) d2 1.160 1.200 (small hole) d2 0.650 0.700 core diameter d3 3.100 3.300 hub recess inner diameter d4 2.700 3.100 hub recess depth w1 0.370 0.570 flange to flange inner width w2 1.630 1.690 hub to hub center width w3 2.090 note: all dimensions are inches to-92 tape and reel taping dimension configuration: figure 4.0 ha h1 ho po p2 p1 f1 do p pd b d l1 l s wo w2 w t t1 hd w1 to-92 reel configuration: figure 5.0 user direction of feed sensitive devices electrostatic d1 d3 customized label w2 w1 w3 f63tnr label d4 d2 to-92 tape and reel data, continued july 1999, rev. a
to-92 (fs pkg code 92, 94, 96) to-92 package dimensions january 2000, rev. b 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0.1977 ?2000 fairchild semiconductor international
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